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MRF8P18265Hr6 MRF8P18265Hsr6 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma and multicarrier base station applications with frequencies from 1805 to 1880 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical doherty single--carrier w--cdma performance: v dd =30volts, i dqa = 800 ma, v gsb =1.3v,p out = 72 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 1805 mhz 15.9 44.8 6.9 --31.7 1840 mhz 16.1 43.4 7.0 --31.7 1880 mhz 16.0 43.7 6.7 --32.2 ? capable of handling 10:1 vswr, @ 32 vdc, 1840 mhz, 280 watts cw output power (2 db input overdrive from rated p out ) ? typical p out @ 3 db compression point ? 280 watts cw features ? production tested in a symmetrical doherty configuration ? 100% par tested for guaranteed output power capability ? characterized with large--signal load--pull parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c cw operation @ t c =25 c derate above 25 c cw 446 4.5 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 74 c, 72.5 w cw, 30 vdc, i dqa = 800 ma, v gsb = 1.3 v, 1880 mhz case temperature 90 c, 260 w cw (4) ,30vdc,i dqa = 800 ma, v gsb = 1.3 v, 1880 mhz r jc 0.27 0.25 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. document number: MRF8P18265H rev. 1, 2/2012 freescale semiconductor technical data 1805--1880 mhz, 72 w avg., 30 v single w--cdma lateral n--channel rf power mosfets MRF8P18265Hr6 MRF8P18265Hsr6 case 375i--04 ni--1230--8 MRF8P18265Hr6 case 375j--03 ni--1230s--8 MRF8P18265Hsr6 (top view) rf outa /v dsa figure 1. pin connections rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a n.c. vbw b 18 45 27 36 n.c. ? freescale semiconductor, inc., 2010, 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRF8P18265Hr6 MRF8P18265Hsr6 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds =10vdc,i d = 200 adc) v gs(th) 1.1 1.9 2.6 vdc gate quiescent voltage (v dd =30vdc,i da = 800 madc, measured in functional test) v gs(q) 1.8 2.6 3.3 vdc drain--source on--voltage (v gs =10vdc,i d =2adc) v ds(on) 0.1 0.15 0.3 vdc functional tests (2,3) (in freescale doherty test fixture, 50 ohm system) v dd =30vdc,i dqa = 800 ma, v gsb =1.3v,p out =72wavg., f = 1880 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 13.8 16.0 17.0 db drain efficiency d 41.0 43.7 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.0 6.7 ? db adjacent channel power ratio acpr ? --32.2 --28.0 dbc typical broadband performance (3) (in freescale doherty test fixture, 50 ohm system) v dd =30vdc,i dqa = 800 ma, v gsb =1.3v, p out = 72 w avg., single--carrier w--cdma, iq magnitude cli pping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) 1805 mhz 15.9 44.8 6.9 --31.7 1840 mhz 16.1 43.4 7.0 --31.7 1880 mhz 16.0 43.7 6.7 --32.2 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in a sy mmetrical doherty configuration. (continued)
MRF8P18265Hr6 MRF8P18265Hsr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (1) (in freescale doherty test fixture, 50 ohm system) v dd =30vdc, i dqa = 800 ma, v gsb = 1.3 v, 1805--1880 mhz bandwidth p out @ 1 db compression point, cw p1db ? 224 ? w p out @ 3 db compression point, cw p3db ? 280 ? w imd symmetry @ 17 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 72 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 88 ? mhz gain flatness in 75 mhz bandwidth @ p out =72wavg. g f ? 0.4 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.01 ? db/ c output power variation over temperature (--30 cto+85 c) (2) ? p1db ? 0.005 ? db/ c 1. measurement made with device in a sy mmetrical doherty configuration. 2. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. MRF8P18265Hr6 MRF8P18265Hsr6 figure 2. MRF8P18265Hr6(hsr6) t est circuit component layout c7 v gsa MRF8P18265H rev. 3 cut out area c5 c3 r2 c1 c2 z1 r1 c4 r3 c6 c8 v gsb c15 c16 c13 c14 c17 c18 c19 c20 c11 c12 c22 c21 c9 c10 c23 c24 c25 v dsb c p v dsa table 5. MRF8P18265Hr6(hsr6) test circ uit component designations and values part description part number manufacturer c1, c2, c3, c4, c13, c14, c23, c24 15 pf chip capacitors atc600f150jt250xt atc c5, c6, c11, c12 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c7, c8 100 f, 50 v chip capacitors mcgpr50v107m8x11 multicomp c9, c10 470 f, 63 v chip capacitors mcgpr63v477m13x26--rh multicomp c15, c16 6.8 f chip capacitors c4532x7rih685kt tdk c17, c18 2.2 pf chip capacitors atc600f2r2bt250xt atc c19, c20 0.8 pf chip capacitors atc600f0r8bt250xt atc c21, c22 0.3 pf chip capacitors atc600f0r3bt250xt atc c25 0.1 pf chip capacitor atc600f0r1bt250xt atc r1 50 ? , 4 w chip resistor cw12010t0050gbk atc r2, r3 10 ? , 1/4 w chip resistors crcw120610r0fkea vishay z1 1900 mhz band 90 , 3 db chip hybrid coupler gcs351--hyb1900 soshin pcb 0.020 , r =3.5 rf--35 taconic
MRF8P18265Hr6 MRF8P18265Hsr6 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 1760 irl g ps acpr f, frequency (mhz) figure 3. output peak--to--average ratio compression (parc) broadband performance @ p out = 72 watts avg. -- 2 2 -- 1 0 -- 1 3 -- 1 6 -- 1 9 14.8 16.8 16.6 16.4 -- 3 3 47 46 45 44 -- 2 8 -- 2 9 -- 3 0 -- 3 1 g ps , power gain (db) 16.2 16 15.8 15.6 15.4 15.2 15 1780 1800 1820 1840 1860 1880 1900 1920 43 -- 3 2 -- 2 5 parc parc (db) -- 3 . 6 -- 2 -- 2 . 4 -- 2 . 8 -- 3 . 2 -- 4 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 2 0 -- 3 0 -- 4 0 -- 6 0 1 100 imd, intermodulatio n distortion (dbc) -- 5 0 im5--u im5--l im7--u figure 5. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 45 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 25 65 85 125 0 60 50 40 30 20 10 -- 3 d b = 7 2 w 105 acpr parc acpr (dbc) -- 3 7 -- 2 5 -- 2 7 -- 2 9 -- 3 3 -- 3 1 -- 3 5 17.5 g ps , power gain (db) 17 16.5 16 15.5 15 14.5 g ps -- 2 d b = 5 2 w -- 1 d b = 3 6 w im3--l d d , drain efficiency (%) d , drain efficiency (%) d input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf v dd =30vdc,p out =72w(avg.),i dqa = 800 ma, v gsb =1.3vdc single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probab ility on ccdf v dd =30vdc,i dqa = 800 ma, v gsb =1.3vdc f = 1840 mhz, single--carrier w--cdma, 3.84 mhz channel bandwidth v dd =30vdc,p out = 17 w (pep) i dqa = 800 ma, v gsb =1.3vdc two--tone measurements (f1 + f2)/2 = center frequency of 1840 mhz im3--u im7--l
6 rf device data freescale semiconductor, inc. MRF8P18265Hr6 MRF8P18265Hsr6 typical characteristics 1 g ps p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 11 17 0 60 50 40 30 20 g ps , power gain (db) 16 15 10 300 10 -- 6 0 acpr (dbc) 14 13 12 0 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 0 18 1700 f, frequency (mhz) 12 9 6 1750 gain (db) 15 gain 1800 1850 1900 1950 2000 irl -- 5 0 10 0 -- 1 0 -- 2 0 -- 3 0 irl (db) 3--40 1805 mhz 1840 mhz 1880 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0. 01% probab ility on ccdf v dd =30vdc p in =0dbm i dqa = 800 ma v gsb =1.3vdc d , drain efficiency (%) d 100 acpr 1880 mhz 1840 mhz 1805 mhz v dd =30vd i dqa = 800 ma v gsb =1.3vdc 1880 mhz 1840 mhz 1805 mhz w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 8. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 9.9 db @ 0.01% probabilit y on ccdf input signal 12 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 9. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0
MRF8P18265Hr6 MRF8P18265Hsr6 7 rf device data freescale semiconductor, inc. v dd =30vdc,i dqa = 800 ma f mhz max p out (1) z source ? z load ? watts dbm 1805 195 52.9 2.38 -- j6.43 1.31 -- j2.51 1840 195 52.9 3.70 -- j7.13 1.21 -- j2.50 1880 190 52.8 4.23 -- j7.74 1.24 -- j2.51 (1) maximum output power measurement re flects pulsed 1 db gain compression. z source = test circuit impedance as measured from gate contact to ground. z load = test circuit impedance as measured from drain contact to ground. figure 10. carrier side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd =30vdc,i dqa = 800 ma f mhz max eff. (1) % z source ? z load ? 1805 69.3 2.38 -- j6.43 3.10 -- j1.22 1840 68.9 3.70 -- j7.13 2.59 -- j1.37 1880 68.3 4.23 -- j7.74 2.47 -- j1.17 (1) maximum output power measurement re flects pulsed 1 db gain compression. z source = test circuit impedance as measured from gate contact to ground. z load = test circuit impedance as measured from drain contact to ground. figure 11. carrier side load pull performance ? maximum efficiency tuning z source z load device under test output load pull tuner input load pull tuner
8 rf device data freescale semiconductor, inc. MRF8P18265Hr6 MRF8P18265Hsr6 alternative peak tune load pull characteristics v dd =30vdc,i dqa = 800 ma, pulsed cw, 10 sec(on), 10% duty cycle ideal actual 1805 mhz 34 p in , input power (dbm) 54 52 50 35 55 53 47 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 30 v 51 56 58 33 31 39 30 29 57 49 48 28 32 36 37 38 1880 mhz 1845 mhz 1805 mhz 1880 mhz 1845 mhz f (mhz) p1db p3db watts dbm watts dbm 1805 197 52.9 226 53.5 1845 194 52.9 223 53.5 1880 190 52.8 226 53.5 test impedances per compression level f (mhz) z source ? z load ? 1805 p1db 2.38 -- j6.43 1.30 -- j2.46 1845 p1db 3.70 -- j7.13 1.40 -- j2.51 1880 p1db 4.23 -- j7.74 1.27 -- j2.55 figure 12. pulsed cw output power versus input power @ 30 v note: measurement made on the class ab, carrier side of the device.
MRF8P18265Hr6 MRF8P18265Hsr6 9 rf device data freescale semiconductor, inc. package dimensions
10 rf device data freescale semiconductor, inc. MRF8P18265Hr6 MRF8P18265Hsr6
MRF8P18265Hr6 MRF8P18265Hsr6 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. MRF8P18265Hr6 MRF8P18265Hsr6
MRF8P18265Hr6 MRF8P18265Hsr6 13 rf device data freescale semiconductor, inc. product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2010 ? initial release of data sheet 1 feb. 2012 ? table 3, esd protection characte ristics, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2 ? removed fig. 5, possible circuit topologies , and renumbered all subsequent figures, p. 5--8 ? replaced case outline 375i--03, issue b with 375i--04, issue c, p. 1, 9, 10. on sheet 2, changed dimension f in mm from 0.1--0.18 to 0.10--0.18, changed dimension u in mm from 0.89--1.02 to 0.89--1.14, changed dimension w3 in mm from 12.47--12.72 to 12.47--12.73. ? replaced case outline 375j--02, issue a with 375j--03, issue b, p. 1, 11, 12. on sheet 2, changed dimension a in mm from 32.13--32.38 to 32.13--32.39, changed dimension f in mm from 0.1--0.18 to 0.10--0.18, changed dimension u in mm from 8.89--11.43 to 0.89--1.14.
14 rf device data freescale semiconductor, inc. MRF8P18265Hr6 MRF8P18265Hsr6 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010, 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF8P18265H rev. 1, 2/2012

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